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Professor Jonathan England joined the Surrey Ion Beam Centre as Professor of Ion Implantation Technology in March 2017 after spending 25 years in the semiconductor equipment industry, 21 of those in ion implantation with Applied Materials and Varian Semiconductor Associates.

Professor England held senior management positions in the UK and USA leading the technical development of implantation equipment and collaborated with universities and small companies in USA, China, Korea, Australia, Europe and UK in research on implantation based processing of advanced memory devices, ultra-shallow transistor junctions, solar cells and solar glass. He holds over 30 granted US patents in the field of ion implantation.

Jonathan has been an industrial mentor for the Surrey University Ion Beam Centre Steering Committee, European SPIRIT Programme (Support of Public and Industrial Research using Ion Beam Technology), and the “Amorphous Chalcogenide-Based Optoelectronic Platform for Next Generation Optoelectronic Technologies” with Surrey, Southampton and Cambridge Universities.

After obtaining his degrees in physics and nuclear physics at the University of Manchester, Jonathan spent his early career working with ion beams in isotope mass spectrometry at Vacuum Generators and then Columbia University.

Research interests

Jonathan has a passion for modelling the ion beam assisted processing of nanostructures using software that he is helping to develop. High dose implantation processes such as plasma doping significantly alter the workpiece and so models must account for how substrates change during the process; understanding ion scattering effects associated with three dimensional nanostructures requires three dimensional codes.

Comparing models to reality means understanding and extending traditional metrology techniques. Depth profiling techniques that use ion beams to sputter the through a substrate distort shallow elemental profiles so he is excited to apply ion beam analysis techniques in the UK National Ion Beam Centre that can avoid perturbing the sample. Jonathan’s research includes extending these IBA methods to be used on three dimensional samples.

Whilst his recent background has revolved around leading edge Si devices and he is maintaining his industrial links, Jonathan is keen to apply the models and techniques above to as many diverse areas as possible. Current projects include investigating the production of isotopically enriched layers for quantum qbits; developing channelling to measure damage in Si, III-V compounds and SiC; commissioning a new time of flight ERD system for the high-resolution depth profiling of light species in thin films; extending three dimensional ion collision codes to include chemical reactions; and modelling sputtering by single ions and clusters via molecular dynamics.

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